Transistors have internal capacitances that are usually not wanted and
act to reduce
the gain at high frequencies. In BJT's these intrinsic capacitors come
from the construction of the device itself and are usually
associated with its internal PN junctions.
In BJT's we usually label as the capacitance
associated with the base-collector junction, and the capacitance associated with the base-emitter junction.
These capacitances are illustrated in Fig. 4.10.