|Dr. Pamela Abshire||Makeswaran Loganathan|
|2211 A. V. Williams Bldg.|
|(301) 405-6629||(301) 405-5711|
|Tu Th 9:30-10:45am EGL 1202||Tu 8-9am EGR 1104|
|Office Hours: Tu 4-5:30pm, Th 11am-12:30pm|
Course Description: The basic physical operation
of PN-junction diodes, MOSFET's and Bipolar transistors. Basic transistor
circuit configurations (CE, CC CB, CS, CD, CG). DC bias; small signal analysis.
Simple multitransistor circuits: diff-amp; current mirror. Frequency response.
Course Website: http://www.ece.umd.edu/~pabshire/enee312h.htm
The objectives of the class are to develop an understanding
the physical mechanisms governing the operation of electronic devices such
as the diode and the transistor. Students will then use this information
to analyze and design analog electronic circuits.
·Microelectronic Circuits, 4th ed., Sedra & Smith
·Physical Operation of the P-N Junction, Diodes, and Transistors, Jon Orloff (e-text available on course website)
readings from Microelectronic Devices and Circuits, Clifton Fonstad
(on reserve in Engineering library)
Grading: The grading will be based on homework, two quizzes, a mid-term test, and a final exam. The following is a tentative weighting for determining overall grades.
|Final exam||40%||May 21 1:30-3:30pm|
|Homework||20%||assigned Thursday, due Thursday by 6pm|
Academic dishonesty will not be tolerated. All
work submitted for grading must be your own. The University Code
of Academic Integrity, which can be found at
prohibits students from committing the following acts of academic dishonesty:
cheating, fabrication, facilitating academic dishonesty, and plagiarism.
Academic dishonesty in this class includes outright copying on homework;
however, discussing homework problems and exchanging tips is permissible
and also encouraged. Instances of academic dishonesty will be referred
to the Office of Judicial Programs.
Tentative Schedule (subject to change):
Week 1 (Jan 29, 31): Introduction, basic electronic materials, doping
Week 2 (Feb 5, 7): motion of carriers: diffusion, drift
Week 3 (Feb 12, 14): excess carriers, PN junction
Week 4 (Feb 19, 21): depletion, bias, current flow through PN junction
Week 5 (Feb 26, 28): simple diode circuits, Quiz #1
Week 6 (Mar 5, 7): BJT intro, forward mode
Week 7 (Mar 12, 14): BJT reverse mode, current gain
Week 8 (Mar 19, 21): BJT single transistor amp, Midterm
Week 9 (Apr 2, 4): CE/CB/CC configurations, Ebers-Moll model
Week 10 (Apr 9, 11): BJT circuits
Week 11 (Apr 16, 18): MOSFETs
Week 12 (Apr 23, 25): EKV model, small and large signal models
Week 13 (Apr 30, May 2): simple MOS circuits, Quiz #2
Week 14 (May 7, 9): op amps, frequency response, filters
Week 15 (May 14): integrated circuits